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參數資料
| 型號： | HUF76013D3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場效應管) |
| 中文描述： | 20 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 245K |
| 代理商： | HUF76013D3S |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
1
10
50
300
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED T
C
= 25
o
C
SINGLE PULSE
0
10
20
30
40
2
3
4
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
40
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5V
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
10
20
30
40
50
2
4
6
8
10
I
D
= 5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
I
D
= 20A
I
D
= 10A
0.6
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
HUF76013P3, HUF76013D3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF76013P3 | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場效應管) |
| HUF76013D3S | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs |
| HUF76013D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA |
| HUF76013P3 | 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs |
| HUF76113SK8 | 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF76013D3ST | 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76013P3 | 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76105DK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105DK8T | 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76105SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
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