參數(shù)資料
型號： HUF76013D3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs(20A, 20V, 0.022 Ω,N溝道功率MOS場效應(yīng)管)
中文描述： 20 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/11頁
文件大小： 245K
代理商： HUF76013D3S
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
20
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
μ
A
nA
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
I
D
= 20A, V
GS
= 10V (Figures 8, 9)
I
D
= 20A, V
GS
= 5V (Figure 8)
1
-
3
V
Drain to Source ON Resistance
-
0.018
0.022
W
-
0.025
0.030
W
SWITCHING SPECIFICATIONS
(V
GS
= 5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 10V, I
D
= 20A
V
GS
=
5V, R
GS
= 19
(Figures 14, 18, 19)
-
-
197
ns
Turn-On Delay Time
-
11
-
ns
Rise Time
-
120
-
ns
Turn-Off Delay Time
-
19
-
ns
Fall Time
-
30
-
ns
Turn-Off Time
-
-
72
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 10V, I
D
= 20A
V
GS
=
10V,
R
GS
= 19
(Figures 15, 18, 19)
-
-
151
ns
Turn-On Delay Time
-
7
-
ns
Rise Time
-
93
-
ns
Turn-Off Delay Time
-
37
-
ns
Fall Time
-
29
-
ns
Turn-Off Time
-
-
100
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Q
g(TOT)
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 10V,
I
D
= 20A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
14.4
17
nC
Total Gate Charge at 5V
-
7.8
9
nC
Threshold Gate Charge
-
0.9
1
nC
Gate to Source Gate Charge
-
3.5
-
nC
Gate to Drain “Miller” Charge
-
3.2
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
624
-
pF
Output Capacitance
-
444
-
pF
Reverse Transfer Capacitance
-
71
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 20A
I
SD
= 10A
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
55
ns
Reverse Recovered Charge
Q
RR
-
-
82
nC
HUF76013P3, HUF76013D3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76013D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76013P3 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105DK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105SK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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