參數(shù)資料
型號： HUF75939S3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 22 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 4/10頁
文件大?。?/td> 195K
代理商： HUF75939S3ST
2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.1
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
100
μ
s
10ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
300
200
1
0.001
10
100
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
I
A
,
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
10
20
30
40
2
3
4
6
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5
0
10
20
30
40
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
=4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 10V
V
GS
= 5V
0
2
3
4
5
6
1
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 22A
0
-80
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-40
0
40
80
120
160
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
160
0.6
0.8
1.0
1.2
HUF75939P3, HUF75939S3ST
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HUF75945G3 RES,SIP,1KOHM,.6W,6PIN,/2
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相關代理商/技術參數(shù)
參數(shù)描述
HUF75945G3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945P3 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945S3ST 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76009D3S 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.027Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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