參數(shù)資料
型號： HUF75939S3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 22 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/10頁
文件大小： 195K
代理商： HUF75939S3ST
2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
200
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 190V, V
GS
= 0V
V
DS
= 180V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 22A, V
GS
= 10V (Figure 9)
-
0.102
0.125
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-220 and TO-263
-
-
0.83
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 100V, I
D
= 22A
V
GS
=
10V,
R
GS
= 4.7
(Figures 18, 19)
-
-
57
ns
Turn-On Delay Time
t
d(ON)
-
12
-
ns
Rise Time
t
r
-
26
-
ns
Turn-Off Delay Time
t
d(OFF)
-
65
-
ns
Fall Time
t
f
-
33
-
ns
Turn-Off Time
t
OFF
-
-
147
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 100V,
I
D
= 22A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
117
152
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
64
83
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
5
7
nC
Gate to Source Gate Charge
Q
gs
-
9
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
24
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
2200
-
pF
Output Capacitance
C
OSS
-
400
-
pF
Reverse Transfer Capacitance
C
RSS
-
120
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 22A
I
SD
= 11A
I
SD
= 22A, dI
SD
/dt = 100A/
μ
s
I
SD
= 22A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
240
ns
Reverse Recovered Charge
Q
RR
-
-
1500
nC
HUF75939P3, HUF75939S3ST
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75945G3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945P3 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945S3ST 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76009D3S 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76009D3ST 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.027Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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