參數(shù)資料
型號： HUF75829D3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場效應管)
中文描述： 18 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/9頁
文件大?。?/td> 122K
代理商： HUF75829D3S
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
150
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 140V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 135V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 18A, V
GS
= 10V (Figure 9)
-
0.0925
0.110
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-251 and TO-252
-
-
1.36
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
100
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 75V, I
D
= 18A
V
GS
=
10V,
R
GS
= 10
(Figures 18, 19)
-
-
58
ns
Turn-On Delay Time
t
d(ON)
-
8.5
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
53
-
ns
Fall Time
t
f
-
30
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 75V,
I
D
= 18A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
58
70
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
31
37
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
2.1
2.5
nC
Gate to Source Gate Charge
Q
gs
-
4.6
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
11
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1080
-
pF
Output Capacitance
C
OSS
-
260
-
pF
Reverse Transfer Capacitance
C
RSS
-
90
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 18A
-
-
1.25
V
I
SD
= 9A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 18A, dI
SD
/dt = 100A/
μ
s
-
-
155
ns
Reverse Recovered Charge
Q
RR
I
SD
= 18A, dI
SD
/dt = 100A/
μ
s
-
-
800
nC
HUF75829D3, HUF75829D3S
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