3
FN2462.3
September 12, 2005
Specifications HCTS138MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .±
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . .+265
o
C
Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1
Thermal Resistance
SBDIP Package . . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . .0.44W
If device power exceeds package dissipation capability, provide
heat sinking or derate linearly at the following rate:
SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/
o
C
θ
JA
θ
JC
73
o
C/W
114
o
C/W
24
o
C/W
29
o
C/W
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent dam-
age. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electri-
cal Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . . 500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGRO
UPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
μ
A
2, 3
+125
o
C, -55
o
C
-
750
μ
A
Output Current (Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
μ
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
μ
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
μ
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
μ
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
±
0.5
μ
A
2, 3
+125
o
C, -55
o
C
-
±
5.0
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.