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參數(shù)資料
| 型號(hào)： | HT6116-70 |
| 廠商： | Holtek Semiconductor Inc. |
| 英文描述： | CMOS 2K??8-Bit SRAM |
| 中文描述： | 的CMOS 2K？？8位SRAM |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 305K |
| 代理商： | HT6116-70 |
(6) OE is continuously low (OE =V
IL
).
(7) D
OUT
is at the same phase of the write data of this write cycle.
(8) D
OUT
is the read data of the next address.
(9) If CS is low during this period, I/O pins are in the output state; then the data input
signals of the opposite phase to the outputs must not be applied to them.
(10) Transition is measured
±
500mV from the steady state.
Data Rentention Characteristics
(Ta=–40
°
C to +85
°
C)
Symbol
Parameter
Conditions
Min.
Max. Unit
V
DR
V
DD
for Data Retention
CS
≥
V
DD
-0.2V
2
5.5
V
I
CCDR
Data Retention Current
V
DD
=3V, CS
≥
V
DD
-0.2V
V
IN
≥
V
DD
-0.2V or V
IN
≤
0.2V
—
50
μ
A
t
CDR
Chip Disable Data Retention Time See Retention Timing
0
—
ns
t
R
Operation Recovery Time
See Retention Timing
t
RC
*
—
ns
*t
RC
=Read Cycle Time
Low V
DD
Data Retention Timing
HT6116-70
8
3rd J uly ’97
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HT6116-70(24DIP) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HT6116-70(24SDIP) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HT6116-70(24SOIC) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HT6116-70-24DIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-16K CMOS SRAM |
| HT6116-70S-24SOP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-SM-16K CMOS SRAM |
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