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參數(shù)資料
| 型號： | HT6116-70 |
| 廠商： | Holtek Semiconductor Inc. |
| 英文描述： | CMOS 2K??8-Bit SRAM |
| 中文描述： | 的CMOS 2K？？8位SRAM |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 305K |
| 代理商： | HT6116-70 |
Pin Description
Pin No.
Pin Name
I/O
Description
8~1,
23, 22, 19
A0~A7
A8, A9, A10
I
Address inputs
9~11
13~17
D0~D2
D3~D7
I/O
Data inputs and outputs
12
VSS
I
Negative power supply, usually connected to the ground
18
CS
I
Chip select signal pin
When this signal is high, the chip is in the standby mode. The
chip is in the active mode, if CS is low.
20
OE
I
Output enable signal pin
21
WE
I
Write enable signal pin
24
VDD
I
Positive power supply
Absolute Maximum Ratings*
Supply Voltage............................–0.3V to +7.0V
Storage Temperature...............–50
°
C to +125
°
C
Operating Temperature.............–40
°
C to +85
°
C
Input Voltage................. V
SS
–0.3V to V
DD
+0.3V
*Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. These are stress ratings only. Functional operation of this device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied and exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
D.C. Characteristics
(Ta=25°C)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
DD
Operating Voltage
—
—
4.5
5.0
5.5
V
I
LI
Input Leakage Current
5V
V
IN
=0 to V
DD
—
0.1
10
μ
A
μ
A
I
LO
Output Leakage Current
5V
V
O
=0 to V
DD
—
0.1
10
I
DD
Operating Current
5V
V
IH
=2.2V, V
IL
=0.8V
In write mode, t
WC
=1
μ
s.
—
45
90
mA
5V
V
IH
=2.2V, V
IL
=0.8V
In read mode, t
RC
=1
μ
s.
—
80
90
mA
I
STB
Standby Current
5V
V
IH
=2.2V, V
IL
=0.8V
(TTL Input)
—
0.8
1.5
mA
5V
V
IH
=4.8V, V
IL
=0.2V
(CMOS Input)
—
0.1
3
μ
A
HT6116-70
2
3rd J uly ’97
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| HT6116-70(24DIP) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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| HT6116-70-24DIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-16K CMOS SRAM |
| HT6116-70S-24SOP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-SM-16K CMOS SRAM |
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