參數(shù)資料
型號： HS1-2420RH-Q
廠商： HARRIS SEMICONDUCTOR
元件分類： 運動控制電子
英文描述： Radiation Hardened Fast Sample and Hold
中文描述： SAMPLE AND HOLD AMPLIFIER, CDIP14
文件頁數(shù)： 3/13頁
文件大?。?/td> 122K
代理商： HS1-2420RH-Q
3
Specifications HS-2420RH
Digital Input Current
IIN1
VIN1 = 0V
1
+25
o
C
-
800
μ
A
2, 3
-55
o
C, +125
o
C
+25
o
C
-55
o
C, +125
o
C
+25
o
C
-55
o
C, +125
o
C
+25
o
C
-55
o
C, +125
o
C
+125
o
C
-
800
μ
A
IIN2
VIN2 = 5.0V
1
-
20
μ
A
2, 3
-
20
μ
A
Digital Input Voltage
VIL
1
-
0.8
V
2, 3
-
0.8
V
VIH
1
2.0
-
V
2, 3
2.0
-
V
Drift Current
ID
VIN = 0V, RL = 2k
, CL = 50pF,
S/H = 4.0V
2
-10
10
nA
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at V+ = +15V, V- = -15V, VIL = 0.8V (Sample), VIH = 2.0V (Hold), CH = 1000pF, -Input Tied to Output, Unless Otherwise Specified
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Hold Step Error
VERROR
VS/H = 0V and 4V,
tRISE (VS/H)
≈
30ns (Note 1)
9
+25
o
C
-20
20
mV
Transient Response
Rise Time and Fall Time
TR(TR)
CL = 50pF, RL = 2k
, AV = +1,
VOUT = 200mVP-P
9
+25
o
C
-
100
ns
TR(TF)
9
+25
o
C
-
100
ns
Transient Response
Overshoot
TR(+OS)
CL = 50pF, RL = 2k
, AV = +1,
VOUT = 200mVP-P
9
+25
o
C
-
40
%
TR(-OS)
9
+25
o
C
-
40
%
Transient Response
Slew Rate
TR(+SR)
CL = 50pF, RL = 2k
, AV = +1,
VOUT = 10VP-P
9
+25
o
C
3.5
-
V/
μ
s
TR(-SR)
9
+25
o
C
3.5
-
V/
μ
s
NOTE:
1. VERROR = VOUT (VS/H = 0V) - VOUT (VS/H = 4V)
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at V+ = +15V, V- = -15V, VIL = 0.8V (Sample), VIH = 2.0V (Hold), CH = 1000pF, -Input Tied to Output, Unless Otherwise Specified
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Hold Mode Feedthrough
Attenuation
VATTEN
RL = 2k
, CL = 50pF, AV = +1,
VIN = 20VP-P, fIN = 50kHz
1
+25
o
C, -55
o
C,
+125
o
C
70
-
dB
Gain Bandwidth Product
GBWP
RL = 2k
, CL = 50pF, AV = +1,
VIN = 100mVP-P
1
+25
o
C
2.5
-
MHz
Acquisition Time (0.1%)
+tACQ (0.1%)
RL = 2k
, CL = 50pF, AV = +1,
VOUT = 0V and +10V
1
+25
o
C
-
4
μ
s
-tACQ (0.1%)
RL = 2k
, CL = 50pF, AV = +1,
VOUT = 0V and -10V
1
+25
o
C
-
4
μ
s
Acquisition Time (0.01%)
+tACQ (0.01%)
RL = 2k
, CL = 50pF, AV = +1,
VOUT = 0V and +10V
1
+25
o
C
-
6
μ
s
-tACQ (0.01%)
RL = 2k
, CL = 50pF, AV = +1,
VOUT = 0V and -10V
1
+25
o
C
-
6
μ
s
NOTE: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These
parameters are characterized upon initial design release and upon design changes which would affect these characteristics.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at V+ = +15V, V- = -15V, VIL = 0.8V (Sample); VIH = 2.0V (Hold); CH = 1000pF, -Input Tied to Output, Unless Otherwise Specified
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518855
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