參數(shù)資料
型號: HS-26CT31RH-T
廠商: Intersil Corporation
英文描述: Radiation Hardened Quad Differential Line Driver(抗輻射四路差分線驅(qū)動器)
中文描述: 輻射加固四路差分線路驅(qū)動器(抗輻射四路差分線驅(qū)動器)
文件頁數(shù): 3/3頁
文件大?。?/td> 33K
代理商: HS-26CT31RH-T
3
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
2450
μ
m x 4950
μ
m x 533
μ
m
±
25.4
μ
m
(97 x 195 x 21mils
±
1mil)
METALLIZATION:
M1: Mo/Tiw
Thickness: 5800
M2: Al/Si/Cu
Thickness: 10k
±
1k
SUBSTRATE POTENTIAL:
Internally connected to V
DD.
May be left floating.
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: SiO
2
Thickness: 8k
±
1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
285
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
HS-26CT31RH
(14) DO
(13) DO
(12) ENABLE
(11) CO
(10) CO
AO (2)
AO (3)
ENABLE (4)
BO (5)
BO (6)
B
G
C
G
(
(
D
(
(
D
HS-26CT31RH-T
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