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參數(shù)資料
| 型號： | HPLU3103 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs(52A, 30V, 0.019 Ω,N溝道,邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 71K |
| 代理商： | HPLU3103 |
6-7
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
15
30
45
60
25
50
75
100
125
150
1
10
100
0.001
1000
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED I
AS
V
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
100
0.01
10
E
AS
POINT
0.01
0.1
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
Z
θ
J
,
T
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HPLR3103, HPLU3103
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