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參數資料
| 型號： | HPLU3103 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs(52A, 30V, 0.019 Ω,N溝道,邏輯電平功率MOS場效應管) |
| 中文描述： | 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數： | 2/6頁 |
| 文件大小： | 71K |
| 代理商： | HPLU3103 |
6-4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Othewise Specified
HPLR3103, HPLU3103
30
30
±
16V
52
390
240
89
0.71
-55 to 150
UNITS
V
V
V
A
A
mj
W
W/
o
C
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Single Pulse Avalanche Energy (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
C
= 125
o
C
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
Reference to 25
o
C, I
D
= 1mA
-
-
100
nA
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
-
0.037
-
V
Drain to Source On Resistance
(Note 3)
r
DS(ON)
I
D
= 28A, V
GS
= 10V
-
-
0.019
I
D
= 23A, V
GS
= 4.5V
-
-
0.024
Turn-On Delay Time
t
d(ON)
V
DD
= 15V, I
D
34A, R
L
= 0.441
, V
GS
=
4.5V,
R
GS
=3.4
,
I
g(REF)
= 3mA
-
9
-
ns
Rise Time
t
r
-
210
-
ns
Turn-Off Delay Time (Note 3)
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
54
-
ns
Total Gate Charge
Q
g
V
DD
= 24V
I
D
34A,
V
GS
= 4.5V
(Figure 6)
-
-
50
nC
Gate to Source Charge
Q
gs
-
-
14
nC
Gate to Drain “Miller” Charge
Q
gd
-
-
28
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 5)
-
1600
-
pF
Output Capacitance
C
OSS
-
640
-
pF
Reverse Transfer Capacitance
C
RSS
-
320
-
pF
Internal Source Inductance
L
S
Measured From the
SourceLead,6mm(0.25in)
From Package to Center of
Die
ModifiedMOSFET
Symbol Showing
the Internal Devic-
es Inductances
-
7.5
-
nH
Internal Drain Inductance
L
D
Measured From the Drain-
Lead, 6mm (0.25in) From
Package to Center of Die
-
4.5
-
nH
L
S
L
D
G
D
S
HPLR3103, HPLU3103
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