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參數(shù)資料
| 型號： | HP4936DYT |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO |
| 中文描述： | 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HP4936DYT |
2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. TRANSFER CHARACTERISTICS
FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 4.
CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 5.
GATE TO SOURCE VOLTAGE vs GATE CHARGE
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0
6
12
18
24
30
0
1.0
2.0
3.0
4.0
0.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3V
V
GS
= 10, 9, 8, 7, 6, 5V
1.5
2.5
3.5
2, 1V
4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.8% MAX
0
1
2
3
4
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
25
o
C
125
o
C
6
0
6
12
18
24
30
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.8% MAX
T
A
= -55
C
0
0.02
0.04
0.06
0.08
0.10
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
0
6
12
18
24
30
36
V
GS
= 10V
D
,
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.8% MAX
0
250
500
750
1000
1250
0
6
12
18
24
30
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
G
,
V
DS
= 15V
I
D
= 5.8A
0.5
0.75
1.00
1.25
1.50
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
150
2.00
1.75
V
GS
= 10V
I
D
= 5.8A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.8% MAX
HP4936DY
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