參數(shù)資料
型號(hào): HP4936DYT
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO
中文描述: 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 152K
代理商: HP4936DYT
2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
HP4936DY
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
16
V
Drain Current
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (10
μ
s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
DM
5.8
30
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
o
2
0.02
W
o
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
A
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
1
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 30V, V
GS
= 0V, T
A
= 55
o
C
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 4.7A, V
GS
= 4.5V (Figures 6, 8)
-
0.042
0.055
I
D
= 5.8A, V
GS
= 10V (Figures 6, 8)
-
0.030
0.037
Turn-On Delay Time
t
d(ON)
V
R
R
DD
L
= 15
GS
= 6
= 15V, I
D
GEN
(Figures 12, 13)
1A,
=
, V
10V,
-
10
16
ns
Rise Time
t
r
-
10
16
ns
Turn-Off Delay Time
t
d(OFF)
-
27
40
ns
Fall Time
t
f
-
24
35
ns
Total Gate Charge
Q
g
V
(Figures 14, 15)
DS
= 15V, V
GS
= 10V, I
D
5.8A
-
18
25
nC
Gate to Source Charge
Q
gs
-
4.5
-
nC
Gate to Drain Charge
Q
gd
-
2.5
-
nC
Input Capacitance
C
ISS
V
f = 1MHz
(Figure 4)
DS
= 25V, V
GS
= 0V,
-
625
-
pF
Output Capacitance
C
OSS
-
270
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Thermal Resistance Junction to Ambient
R
θ
JA
Pulse Width <10s (Figure 11)
Device Mounted on FR-4 Material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 1.7A (Figure 7)
-
0.8
1.2
V
Reverse Recovery Time
t
rr
I
SD
= 1.7A, dI
SD
/dt = 100A/
μ
s
-
45
80
ns
HP4936DY
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