- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370646 > HN58S65A (Hitachi,Ltd.) 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) PDF資料下載
參數(shù)資料
| 型號： | HN58S65A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| 中文描述： | 64畝的EEPROM（8 KWord的× 8位）（64畝的EEPROM（8K的字× 8位）） |
| 文件頁數(shù)： | 6/19頁 |
| 文件大小： | 144K |
| 代理商： | HN58S65A |
HN58S65A Series
6
Write Cycle
Parameter
Symbol
Min*
2
Typ
Max
Unit
Test
conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
0
—
—
ns
Address hold time
150
—
—
ns
&(
to write setup time (
:(
controlled)
0
—
—
ns
&(
hold time (
:(
controlled)
0
—
—
ns
:(
to write setup time (
&(
controlled)
0
—
—
ns
:(
hold time (
&(
controlled)
0
—
—
ns
2(
to write setup time
0
—
—
ns
2(
hold time
0
—
—
ns
Data setup time
150
—
—
ns
Data hold time
0
—
—
ns
:(
pulse width (
:(
controlled)
200
—
—
ns
&(
pulse width (
&(
controlled)
200
—
—
ns
Data latch time
200
—
—
ns
Byte load cycle
0.4
—
30
μs
Byte load window
100
—
—
μs
Write cycle time
—
—
15*
3
ms
Time to device busy
120
—
—
ns
Write start time
Notes: 1. t
is defined as the time at which the outputs achieve the open circuit conditions and are no
longer driven.
2. Use this device in longer cycle than this value.
3. t
must be longer than this value unless polling techniques or RDY/
%XV\
are used. This device
automatically completes the internal write operation within this value.
4. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/
%XV\
are
used.
5. A6 through A12 are page addresses and these addresses are latched at the first falling edge of
:(
.
6. A6 through A12 are page addresses and these addresses are latched at the first falling edge of
&(
.
7. See AC read characteristics.
0*
4
—
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58V1001P-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001T-25 | 5015 RR 3#8 SKT RECP |
| HN58V1001 | 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位)) |
| HN58V256AI | 256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58S65AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58S65AT-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。