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參數(shù)資料
| 型號(hào)： | HN58S256AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) |
| 中文描述： | 32768字× 8位電可擦除和可編程的CMOS光盤（256k的EEPROM（32K的字× 8位）） |
| 文件頁(yè)數(shù)： | 15/19頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | HN58S256AI |
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Datasheet Title
15
2. Data Protection at V
CC
On/Off
When V
CC
is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as
a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming,
the EEPROM must be kept in an unprogrammable state while the CPU is in an unstable state.
Note:
The EEPROM should be kept in unprogrammable state during V
CC
on/off by using CPU RESET
signal.
V
CC
CPU
RESET
Unprogrammable
Unprogrammable
*
*
(1)
Protection by
CE
,
OE
,
WE
To realize the unprogrammable state, the input level of control pins must be held as shown in the table
below.
CE
OE
WE
×
: Don’t care.
V
CC
: Pull-up to V
CC
level.
V
SS
: Pull-down to V
SS
level.
V
CC
×
×
×
×
×
V
SS
×
V
CC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58S256A | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-20 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-15 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S65AI | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| HN58S65AT-15 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58S256ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58S256AT-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-20 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256 k EEPROM (32-kword x 8-bit) |
| HN58S256ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S256ATI-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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