參數(shù)資料
型號: HN58S256AI
廠商: Hitachi,Ltd.
英文描述: 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位))
中文描述: 32768字× 8位電可擦除和可編程的CMOS光盤(256k的EEPROM(32K的字× 8位))
文件頁數(shù): 13/19頁
文件大?。?/td> 119K
代理商: HN58S256AI
Datasheet Title
13
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
.
When
CE
or
WE
is high for 100
μ
s after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data
Polling
Data
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
, and data is latched by the
rising edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
page-programmed less than 10
4
cycles.
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相關代理商/技術參數(shù)
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