參數(shù)資料
型號(hào)： HN29WT800
廠商： Hitachi,Ltd.
英文描述： 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
中文描述： 1048576字× 8位/ 524288字× 16位CMOS閃存
文件頁(yè)數(shù)： 15/37頁(yè)
文件大?。?/td> 170K
代理商： HN29WT800
HN29WT800 Series, HN29WB800 Series
15
Page Program Command (41H):
Page program allows fast programming of 128-word of data. Writing of
41H initiates the page program operation. From 2nd cycle to 129th cycle write data must be serially inputted.
Address A6 to A0 have to be incremented from 00H to 7FH. After completion of data loading, the WSM
controls the program pulse application and verify operation. Basically re-program must not be done on a page
which has already programmed.
Data Protection:
The HN29WT800 Series, HN29WB800 Series provide selective block locking of memory
blocks. Each block has an associated nonvolatile lock-bit which determines the lock status of the block. In
addition, the HN29WT800 Series, HN29WB800 Series have a master write protect pin (
WP
) which prevents
any modifications to memory blocks whose lock-bits are set to Low, when
WP
is low. When
WP
is high or
RP
is V
HH
, all blocks can be programmed or erased regardless of the state of lock-bits, and the lock-bits are
cleared to High by erase.
Power Supply Voltage:
A delay time of 2
μ
s is required before any device operation is initiated. The delay
time is measured from the time V
CC
reaches V
CC
min (3.0 V). During powerup,
RP
= V
SS
is recommended.
Falling in Busy status is not recommended for possibility of damaging the device.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Notes
V
CC
voltage
All input and output voltages except V
CC
, A9,
RP
A9,
RP
supply voltage
V
CC
Vin, Vout
–0.2 to +4.6
V
1
–0.6 to +4.6
V
1, 2
V
HH
, V
ID
Topr
–0.6 to +14.0
V
1, 2
Operating temperature range
0 to +70
C
Storage temperature range
Tstg
–65 to +125
C
Storage temperature under bias
Notes: 1. Relative to V
SS
.
2. Minimum DC voltage is –0.5 V on input/output pins. During transition, this level may undershoot to
–2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins are V
CC
+0.5 V which, during
transitions, may overshoot to V
CC
+1.5 V for periods < 20 ns.
Tbias
–10 to +80
C
Capacitance
(Ta = 25C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
Output capacitance
Cout
—
—
12
pF
Vout = 0 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29WT800FP-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800FP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800FP-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WT800R-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WT800R-12 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
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