參數(shù)資料
型號(hào): HN29WT800
廠商: Hitachi,Ltd.
英文描述: 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
中文描述: 1048576字× 8位/ 524288字× 16位CMOS閃存
文件頁數(shù): 11/37頁
文件大?。?/td> 170K
代理商: HN29WT800
HN29WT800 Series, HN29WB800 Series
11
Software Command Definition
First bus cycle
Second bus cycle
Third bus cycle
Command
Operati on
mode
Address
Data
(I/O7 to
I/O0)*
1
Operati on
mode
Address
Data
(I/O7
to I/O0)
Operati on
mode
Address
Data
(I/O7
to I/O0)
Read array (memory) Write
×
×
×
×
×
×
×
×
×
×
FFH
Read identifier codes Write
90H
Read
IA*
2
ID*
2
Read status register
Write
70H
Read
×
SRD*
3
Clear status register
Write
50H
Page program*
5
Write
41H
Write
WA0*
4
WD0*
4
Write
WA1
WD1
Block erase
Write
20H
Write
BA*
6
D0H
Suspend
Write
B0H
Resume
Write
D0H
Read lock bit status
Write
71H
Read
BA
I/O6*
7
Lock bit
program/confirm
Write
77H
Write
BA
D0H
Erase all unlocked
blocks
Notes: 1. In the word mode, upper byte data (I/O8 to I/O15) is ignored.
2. IA = Identifier address, A0 = V
IL
(Manufacture code), A0 = V
IH
(Device code), ID = ID code,
BYTE
= V
IL
: A-1, A1 to A18 = V
IL
,
BYTE
= V
IH
: A1 to A18 = V
IL
.
3. SRD = Status register data
4. WA = Write address, WD = Write data
5.
BYTE
= V
: Write address and write data must be provided sequentially from 00H to FFH for A-1
to A6. Page size is 256 byte (256-byte
×
8-bit).
BYTE
= V
: Write address and write data must be provided sequentially from 00H to 7FH for A0 to
A6. Page size is 128 word (128-word
×
16-bit).
6. BA = Block address (A12 to A18), (Addresses except block address must be V
IH
)
7. I/O6 provides block lock status, I/O6 = 1: Block unlocked, I/O6 = 0: Block locked.
Write
×
A7H
Write
×
D0H
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