參數(shù)資料
型號(hào): HN29V51211
廠商: Hitachi,Ltd.
英文描述: 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述: 512M超過32113型快閃記憶體部門(542581248位)
文件頁數(shù): 20/42頁
文件大小: 306K
代理商: HN29V51211
HN29V51211 Series
20
Power on and off, Serial Read Mode
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Notes
Write cycle time
t
CWC
t
SCC
t
CES
t
CEH
t
WP
t
WPH
t
AS
t
AH
t
DS
t
DH
t
SAC
t
OES
t
OEL
t
OER
t
OEWS
120
ns
Serial clock cycle time
CE
setup time
CE
hold time
50
ns
0
ns
0
ns
Write pulse time
60
ns
CE
= V
IL
,
OE
= V
IH
Write pulse high time
40
ns
Address setup time
50
ns
Address hold time
10
ns
Data setup time
50
ns
Data hold time
10
ns
SC to output delay
OE
setup time for SC
OE
low to output low-Z
OE
setup time before read
OE
setup time before
command write
50
ns
CE
=
OE
= V
IL
,
WE
= V
IH
0
ns
0
40
ns
100
ns
0
ns
SC to output hold
OE
high to output float
WE
to SC delay time
RES
to
CE
setup time
SC to
OE
hold time
t
SH
t
DF
t
WSD
t
RP
t
SOH
t
SP
t
SPL
t
SCS
t
CDS
t
CDH
t
VRS
t
VRH
t
CESR
t
DFP
15
ns
CE
=
OE
= V
IL
,
WE
= V
IH
CE
= V
IL
,
WE
= V
IH
40
ns
1
50
μs
2
0.3
ms
50
ns
SC pulse width
20
ns
SC pulse low time
SC setup time for
CE
CDE
setup time for
WE
CDE
hold time for
WE
V
CC
setup time for
RES
RES
to V
CC
hold time
CE
setup time for
RES
RDY/
Busy
undefined for V
CC
off
RES
high to device ready
CE
pulse high time
CE
,
WE
setup time for
RES
RES
to
CE
,
WE
hold time
20
ns
0
ns
0
ns
20
ns
1
μs
CE
= V
IH
CE
= V
IH
1
μs
1
μs
0
ns
t
BSY
t
CPH
t
CWRS
t
CWRH
0.3
ms
200
ns
0
ns
0
ns
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