參數(shù)資料
型號： HN29V51211
廠商： Hitachi,Ltd.
英文描述： 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述： 512M超過32113型快閃記憶體部門（542581248位）
文件頁數(shù)： 2/42頁
文件大?。?/td> 306K
代理商： HN29V51211
HN29V51211 Series
2
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50 μs (max)
Serial access time: 50 ns (max)
Low power dissipation:
I
CC1
= 2 mA (typ) (Read)
I
CC2
= 20 mA (max) (Read)
I
SB2
= 50 μA (max) (Standby)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program)
I
SB3
= 20 μA (max) (Deep standby)
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (579 sectors) within usable sectors
Ordering Information
Type No.
Available sector
Package
HN29V51211T-50
More than 32,113 sectors
12.0
×
18.40 mm
2
0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
相關(guān)PDF資料
PDF描述
HN29V51211T-50 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
HN29W12811T-60 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
HN29W12811 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
HN29W12814A 128M AND type Flash Memory(128M AND型閃速存儲器)
HN29W25611T-50 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29V51211T-50 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
HN29V51211T-50H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others
HN29VB800R-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800R-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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