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參數(shù)資料
| 型號(hào)： | HN1A02F |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications |
| 中文描述： | 硅外延式進(jìn)步黨（厘進(jìn)程）音頻功率放大器應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | HN1A02F |
HN1A02F
2007-11-22
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A02F
Audio Frequency Power Amplifier Applications
Switching applications
z
High h
FE
: h
FE(1)
= 120~400
z
Low V
CE(sat.)
: V
CE (sat)
=
0.2 V (max.) (I
C
=
400 mA, I
B
=
8 mA)
z
Small Power Motor Driver Application.
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
15
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
800
mA
Base current
I
B
160
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics
(Ta = 25
°
C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
―
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
CBO
I
EBO
V
(BR)CEO
h
FE(1) (Note)
V
CB
=
15V, I
E
= 0
V
EB
=
5V, I
C
= 0
I
C
=
10mA,I
B
= 0
V
CE
=
1V, I
C
=
100mA
V
CE
=
1V, I
C
=
800mA
I
C
=
400mA, I
B
=
8mA
V
CE
=
5V, I
C
=
10mA
V
CE
=
5V, I
C
=
10mA
V
CB
=
10V, I
E
= 0, f = 1MHz
―
―
100
100
nA
―
―
―
nA
Collector-Emitter Brakedown Voltage
15
―
―
V
―
120
―
400
DC current gain
h
FE(2)
V
CE (sat)
V
BE
f
T
C
ob
40
―
―
Collector-emitter saturation voltage
―
―
0.5
―
0.2
0.8
V
Base-Emitter voltage
Transition frequency
―
V
―
―
120
―
MHz
Collector output capacitance
―
―
13
―
pF
Note:
h
FE
Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol
Marking Equivalent Circuit
(Top View)
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
EIAJ
TOSHIBA
Weight: 0.015mg(typ)
―
―
2-3N1A
Unit: mm
26
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PDF描述 |
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| HN1A07F | Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Applications |
| HN1A26FS | Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications |
| HN1B01FDW1T1 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 200MA I(C) | SC-74 |
| HN1B01FGR | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN1A07F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Applications |
| HN1A26FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications |
| HN1AM01104Q5 | 制造商:ICOTHING 功能描述: |
| HN1B01F | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| HN1B01F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications |
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