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參數(shù)資料
| 型號(hào)： | HN1A26FS |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications |
| 中文描述： | 硅外延式進(jìn)步黨（厘過(guò)程）頻率通用放大器應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | HN1A26FS |
HN1A26FS
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A26FS
Frequency General-Purpose Amplifier Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
High voltage: V
CEO
=
50 V
High current: I
C
=
100 mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
0.1 mA)/h
FE
(I
C
=
2 mA) = 0.95 (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
50
V
Collector-emitter voltage
50
5
100
30
V
Emitter-base voltage
V
Collector current
mA
Base current
mW
Collector power dissipation
50
mW
Junction temperature
150
°
C
Storage temperature range
55 ~ 150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.1
μ
A
μ
A
Emitter cutoff current
DC current gain
120
400
Collector-emitter saturation voltage
―
0.18
0.3
V
Transition frequency
80
MHz
Collector output capacitance
1.6
pF
Note: h
FE
Classification Y (F): 120 ~ 140, GR (H): 200 ~ 400
( ) Marking symbol
Equivalent Circuit
(top view)
4
5
6
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001g (typ.)
Q1
Q2
1
2
3
Type Name
h
FE
Rank
8F
0
0.1±0.05
6
0.8±0.05
1.0±0.05
0
1
2
0.1±0.05
0
0
3
1
0
5
4
0
+
-
fS6
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
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