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參數(shù)資料
| 型號： | HMMC-5620 |
| 英文描述： | 6-20 GHz Wideband GaAs MMIC Amplifier(6-20 GHz寬帶砷化鎵單片微波集成電路放大器) |
| 中文描述： | 6-20千兆赫寬帶GaAs MMIC放大器（6-20千兆赫寬帶砷化鎵單片微波集成電路放大器） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HMMC-5620 |
2
HMMC-5620 DC Specifications/Physical Properties
[1]
Symbol
Parameters and Test Conditions
I
DD
Drain Current (V
DD
= +5.0 V)
I
DD
Drain Current (V
DD
= +7.0 V)
θ
ch-bs
Thermal Resistance (T
backside
= 25
°
C)
Units
mA
mA
°
C/W
Min.
70
Typ.
100
105
70
Max.
135
Note:
1. Measured in wafer form with T
chuck
= 25
°
C. (Except
θ
ch-bs
).
HMMC-5620 RF Specifications/Physical Properties
V
DD
= 5.0 V, I
DD
(Q) = 100 mA, Z
in
=Z
o
= 50
[1]
Symbol
Parameters and Test Conditions
BW
Guaranteed Bandwidth
S
21
Small Signal Gain
S
21
Small Signal Gain Flatness
RL
in
Input Return Loss
RL
out
Output Return Loss
S
12
Reverse Isolation
P
-1dB
Output Power @ 1 dB Gain Compression
P
sat
Saturated Output Power
H
2
Second Harmonic Power Level (6 <
o
<20)
P
o
(
o
) = 10 dBm
H
3
Third Harmonic Power Level (6 <
o
<20)
P
o
(
o
) = 10 dBm
NF
Noise Figure
Note:
1. Small-signal data measured in wafer form with T
chuck
= 25
°
C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package at T
A
= 25
°
C.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBc
Min.
6
15
Typ.
Max.
20
21
±
1.25
-10
-10
17
±
1.0
-15
-15
-55
12
13
-30
dBc
-40
dB
9.0
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