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參數(shù)資料
| 型號： | HMMC-5620 |
| 英文描述： | 6-20 GHz Wideband GaAs MMIC Amplifier(6-20 GHz寬帶砷化鎵單片微波集成電路放大器) |
| 中文描述： | 6-20千兆赫寬帶GaAs MMIC放大器（6-20千兆赫寬帶砷化鎵單片微波集成電路放大器） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HMMC-5620 |
6–20 GHz High-Gain Amplifier
Technical Data
Features
Wide-Frequency Range:
6–20 GHz
High Gain:
17 dB
Gain Flatness:
±
1.0 dB
Return Loss:
Input
-15 dB
Output -15 dB
Single Bias Supply
Operation
Low DC Power Dissipation:
P
DC
~ 0.5 Watts
Medium Power:
20 GHz: P
-1dB
: 12 dBm
P
sat
:
13 dBm
Description
The HMMC-5620 is a wideband
GaAs MMIC Amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply offers
ease of use. E-Beam lithography
is used to produce gate lengths of
≈
0.3
μ
m. The HMMC-5620 incor-
porates advanced MBE technol-
ogy, Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
DD
Positive Drain Voltage
I
DD
Total Drain Current
P
DC
DC Power Dissipation
P
in
CW Input Power
T
ch
Operating Channel Temp.
T
case
Operating Case Temp.
T
STG
Storage Temperature
T
max
Maximum Assembly Temp.
(for 60 seconds maximum)
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25
°
C except for T
ch
, T
STG
, and T
max
.
Units
V
Min.
Max.
7.5
mA
135
watts
1.0
dBm
°
C
°
C
°
C
°
C
20
+160
-55
-65
+165
+300
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1410 x 1010
μ
m (55.5 x 39.7 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
80 x 80
μ
m (2.95 x 2.95 mils), or larger
HMMC-5620
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