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參數(shù)資料
| 型號(hào)： | HMMC-5025 |
| 英文描述： | 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器) |
| 中文描述： | 2 -50 GHz的寬波段分布式放大器（2 -50千兆赫寬帶分布式放大器） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | HMMC-5025 |
3
HMMC-5025 Applications
The HMMC-5025 traveling wave
amplifier is designed for use as a
general purpose wideband power
stage in communication systems
and microwave instrumentation.
It is ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 50 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are
designed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
DD
) and a single negative gate
supply (V
G1
). The recommended
bias conditions for best perfor-
mance for the HMMC-5025 are
V
DD
= 5.0 V, I
DD
= 75 mA. To
achieve these drain current
levels, V
G1
is typically biased
between -0.2V and -0.6V. No other
bias supplies or connections to
the device are required for 2 to
50 GHz operation. The gate
voltage (V
G1
) should be applied
prior to the drain voltage (V
DD
)
during power up and removed
after the drain voltage during
power down.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below
≈
1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (V
G2
) can be
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22
±
1 gram, stage
temperature should be 150
±
2
°
C,
and ultrasonic power and dura-
tion should be 64
±
1 dB and
76
±
8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see Agilent application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Figure 1. HMMC-5025 Schematic.
Gate
Bias
Low Frequency
Extension
Second Gate
Bias
RF OUTPUT
Low Frequency
Extension
15
15
1.5
470
8.5
RF INPUT
GND
340
50
350
9.2
50
8.5
6
Drain
Bias
Seven Identical Stages
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|---|---|
| HMMC-5027 | 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）) |
| HMMC-5032 | 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器) |
| HMMC-5033 | 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器) |
| HMMC-5034 | 37-43 GHz MMIC Power Amplifier(37-43 GHz單片微波集成電路功率放大器) |
| HMMC-5038 | 38 GHz Adjustable High-Gain Low-Noise Amplifier( 38 GHz 可調(diào)高增益低噪聲放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
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