參數(shù)資料
型號(hào): HMMC-5025
英文描述: 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器)
中文描述: 2 -50 GHz的寬波段分布式放大器(2 -50千兆赫寬帶分布式放大器)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 92K
代理商: HMMC-5025
2 –50 GHz Distributed Amplifier
Technical Data
Features
Frequency Range:
2 – 50 GHz
Small Signal Gain:
8.5 dB
P
-1dB
@ 40 GHz:
12 dBm
Noise Figure:
< 6 dB @ 2 – 35 GHz
< 10 dB @ 35 – 50 GHz
Return Loss:
In/Out: < -10 dB
Description
The HMMC-5025 was designed as
a generic wide band distributed
amplifier, covering the frequency
span 2 – 50 GHz. It consists of
seven stages. Each stage is made
up of two cascoded FETs with
gate peripheries of 48 mm per
FET. Both input and output ports
were designed to provide 50 ohm
terminations. Bonding pads are
provided in the layout to allow
amplifier operation at frequencies
lower than 2 GHz by means of
external circuit components.
The HMMC-5025 is typically
biased at V
DD
= 5 volts and
I
DD
= 75 mA. The second gate is
internally biased by means of a
voltage divider network and an
a.c. ground.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1720 x 920
μ
m (67.7 x 36.2 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
80 x 80
μ
m (3.2 x 3.2 mils)
HMMC-5025
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
DD
Positive Drain Voltage
I
DD
Total Drain Current
V
G1
First Gate Voltage
V
G2
Second Gate Voltage
P
DC
DC Power Dissipation
P
in
CW Input Power
T
ch
Operating Channel Temp.
T
case
Operating Case Temp.
T
STG
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25
°
C except for T
ch
, T
STG
, and T
max
.
Units
V
Min.
Max.
7.0
mA
170
V
-3.5
0
mA
-3.0
+3.0
watts
1.2
dBm
°
C
°
C
°
C
20
+150
-55
-65
+165
T
max
°
C
+300
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