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參數(shù)資料
| 型號： | HMMC-5004 |
| 英文描述： | 3 GHz Wideband Power Amplifier(3 GHz寬帶功率放大器) |
| 中文描述： | 3 GHz的寬帶功率放大器（3 GHz的寬帶功率放大器） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 80K |
| 代理商： | HMMC-5004 |
3 GHz Wideband Power Amplifier
Technical Data
HMMC-5004
Features
Frequency Range:
100 kHz–3 GHz
High Gain:
19 dB
Flat Response:
±
1 dB
10 MHz– 3 GHz
High Isolation:
-50 dB
Return Loss:
Input -20 dB
Output -8 dB
High Power Output:
26.5 dBm Saturated
Harmonics:
-35 dBc
@ P
out
= 21 dBm
Unconditionally Stable
Description
The HMMC-5004 is a monolithic,
wideband amplifier designed and
fabricated using Agilent’s GaAs
RFIC process. It features low
distortion and delivers (typically)
26.5 dBm saturated output power
into 50
over at least a 100 kHz to
3.0 GHz frequency range. The
HMMC-5004 incorporates a 1.0
μ
m
Ti-Pt-Au gate, silicon nitride
passivation and polyimide for
scratch protection.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1530 x 910
μ
m (60.2 x 35.8 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
75 x 75
μ
m (2.95 x 2.95 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
D1
Stage 1 Drain Supply
V
D2
Driver Drain Supply
V
D3
Output Drain Supply
V
SS
Source Supply
P
in
CW Input Power
T
case
Operating Case Temperature
[2]
T
stg
Storage Temperature
Max. Assembly Temperature
(for 60 seconds maximum)
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. Parameters specified at T
A
= 25
°
C, except for T
case
,
T
stg
, and T
max
.
2. Max. continuous operating temperature to achieve 1x10
6
hours MTTF, while
operating with V
D1
= V
D3
+8 V, V
D2
= +5 V, V
SS
= -5 V. Derate MTTF by a factor
of 2 for every 8
°
C above this temperature.
Units
volts
Min.
Max.
+10
volts
+5.2
volts
+9
volts
-8
-3.5
dBm
°
C
°
C
23
-55
90
-65
+165
T
max
°
C
+300
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| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
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