參數(shù)資料
型號(hào)： HMMC-5003
英文描述： 4 GHz Wideband Preamplifier/Amplifier(4 GHz 寬帶前級(jí)放大器/放大器)
中文描述： 4千兆赫寬帶放大器/放大器（4千兆赫寬帶前級(jí)放大器/放大器）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 121K
代理商： HMMC-5003
4 GHz Wideband
Preamplifier/Amplifier
Technical Data
HMMC-5003
Features
Frequency Range:
DC–4 GHz
Flat Response:
±
0.75 dB
5 MHz–4 GHz
High Gain:
11 dB
High Isolation:
-37 dB
Return Loss:
Input -15 dB
Output -15 dB
High Power Output:
19.5 dBm Saturated
Harmonics:
-35 dBc
@ P
out
= 10 dBm
Noise Figure:
7.5 dB
Unconditionally Stable
Description
The HMMC-5003 is a monolithic,
wideband preamplifier designed
and fabricated using Agilent’s
GaAs RFIC process. It features low
distortion and delivers (typically)
19.5 dBm saturated output power
into 50
to at least 4.0 GHz.
Agilent incorporates a 1.0 mm
Ti-Pt-Au gate, silicon nitride
passivation and polyimide for
scratch protection.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1120 x 700
μ
m (44.1 x 27.6 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
85 x 90
μ
m (3.35 x 3.54 mils)
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
DD
Drain Supply
V
SS
Source Supply
P
in
CW Input Power
T
case
Operating Case Temperature
[2]
T
stg
Storage Temperature
Max. Assembly Temperature
(for 60 seconds maximum)
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. Parameters specified at T
A
= 25
°
C, except for T
case
,
T
stg
, and T
max
.
2. Max. continuous operating temperature to achieve 1x10
6
hours MTTF, while
operating with V
DD
= +8.5 V and V
SS
= -5 V. Derate MTTF by a factor of 2 for
every 8
°
C above this temperature.
Units
volts
Min.
Max.
+9.5
volts
-6.5
-3.0
dBm
°
C
°
C
25
-55
125
-65
+165
T
max
°
C
+300
相關(guān)PDF資料
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