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參數(shù)資料
| 型號： | HMC741ST89E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 50 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 932K |
| 代理商： | HMC741ST89E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC741ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
v02.0710
General Description
Functional Diagram
The Hmc741sT89e is an inGap Heterojunction
Bipolar Transistor (HBT) Gain Block mmic smT
amplifier covering 0.05 to 3 GHz. packaged in an
industry standard soT89, the amplifier can be used
as a cascadable 50 ohm rf or if gain stage as well
as a pA or lo driver with up to +18.5 dBm output
power. The Hmc741sT89e offers 20 dB of gain with
a +42 dBm output ip3 at 200 mHz, and can operate
directly from a +5v supply. The Hmc741sT89e
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
p1dB output power: +18.5 dBm
Gain: 20 dB
output ip3: +42 dBm
cascadable 50 ohm i/os
single supply: +5v
industry standard soT89 package
robust 1000v esD, class 1c
stable current over Temperature
Active Bias network
Typical Applications
The Hmc741sT89e is ideal for:
cellular/3G & WimAX/4G
fixed Wireless & WlAn
cATv, cable modem & DBs
microwave radio & Test equipment
if & rf Applications
Electrical Specifications, Vcc = 5V, T
A = +25° C
Features
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
150
240
50 - 1000
50 - 3000
mHz
Gain
19
20
19
21
16
20
12
19
dB
Gain flatness
±0.3
±2.6
dB
Gain variation over Temperature
0.004
0.01
0.004
0.01
dB/ °c
input return loss
16
12
dB
output return loss
17
12
dB
reverse isolation
25
26
dB
output power for 1 dB compression
(p1dB)
16
18.8
16
18.8
16
18.8
14
16
dBm
output Third order intercept (ip3)
(pout= 0 dBm per tone,
1 mHz spacing)
40.5
30
dBm
noise figure
2.5
dB
supply current (icq)
96
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC741ST89E_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 a?? 3 GHz |
| HMC741ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SOT89 |
| HMC742ALP5E | 功能描述:RF Amplifier IC LTE, WiMax 70MHz ~ 4GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:70MHz ~ 4GHz P1dB:21.5dBm 增益:12dB 噪聲系數(shù):4dB RF 類型:LTE，WiMax 電壓 - 電源:5V 電流 - 電源:2.5mA 測試頻率:70MHz ~ 1GHz 封裝/外殼:32-VFQFN 裸露焊盤 供應(yīng)商器件封裝:32-QFN（5x5） 標準包裝:1 |
| HMC742ALP5ETR | 功能描述:RF Amplifier IC LTE, WiMax 70MHz ~ 4GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 頻率:70MHz ~ 4GHz P1dB:21.5dBm 增益:12dB 噪聲系數(shù):4dB RF 類型:LTE，WiMax 電壓 - 電源:5V 電流 - 電源:2.5mA 測試頻率:70MHz ~ 1GHz 封裝/外殼:32-VFQFN 裸露焊盤 供應(yīng)商器件封裝:32-QFN（5x5） 標準包裝:1 |
| HMC742HFLP5E | 制造商:Hittite Microwave Corp 功能描述:IC AMP DVGA 6-BIT 0.5DB 32-QFN |
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