- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65470 > HMC755LP4E (HITTITE MICROWAVE CORP) 2300 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號(hào)： | HMC755LP4E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 2300 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 790K |
| 代理商： | HMC755LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
A
m
p
li
f
ie
r
s
-
li
n
e
A
r
&
p
o
w
e
r
-
s
m
T
HMC755LP4E
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
v03.1110
General Description
Features
Functional Diagram
The HmC755lp4e is a high gain, high linearity GaAs
inGap HBT mmiC power amplifier covering 2.3 to
2.8 GHz. The amplifier provides 31 dB of gain and
+33 dBm of saturated power from a single +5V
supply. The power control pins (Ven1, 2, 3) can be
used to reduce the rf output power/quiescent cur-
rent, or for full power down of the pA. The integrated
output power detector (VDeT) is internally coupled
and requires no external components. for +25 dBm
ofDm output power (64 QAm, 54 mbps), the HmC-
755lp4e achieves an error vector magnitude (eVm)
of only 2.5% making it ideal for wimAX/lTe/4G Appli-
cations. The amplifier is packaged in a compact Qfn
smT package and requires a minimum of external
matching components.
High Gain: 31 dB
High pAe: 28% @ +33 dBm pout
low eVm: 2.5% @ +25 dBm pout
with 54 mbps ofDm signal
High output ip3: +43 dBm
integrated Detector & power Control
24 lead 4x4mm Qfn package: 16mm
Electrical Specifications, T
A = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V
Typical Applications
The HmC755lp4e is ideal for:
Cellular/3G & lTe/4G
wimAX, wiBro & fixed wireless
military & sATCom
Test equipment
parameter
min.
Typ.
max.
Units
frequency range
2.3 - 2.8
GHz
Gain
28
31
dB
Gain Variation over Temperature
0.05
dB/ °C
input return loss
10
dB
output return loss
7
dB
output power for 1dB Compression (p1dB)
28
31
dBm
saturated output power (psat)
33
dBm
output Third order intercept (ip3) [1]
43
dBm
error Vector magnitude @ 2.5 GHz
(54 mbps ofDm signal @ +24.5 dBm pout)
2.5
%
supply Current (icc1 + icc2 + icc3)
400
480
600
mA
Control Current (ien1 + ien2 + ien3)
16
mA
Bias Current (ics)
12
mA
[1] Two-tone output power of +25 dBm per tone, 1 mHz spacing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC759LP3E | 10 MHz - 300 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.5 dB INSERTION LOSS-MAX |
| HMC774 | 7000 MHz - 43000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 13 dB CONVERSION LOSS-MAX |
| HMC787LC3B | 3000 MHz - 10000 MHz RF/MICROWAVE TRIPLE BALANCED MIXER, 11.5 dB CONVERSION LOSS-MAX |
| HMC814 | 6500 MHz - 12300 MHz RF/MICROWAVE FREQUENCY DOUBLER |
| HMC863LP4E | 22000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC755LP4E_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz |
| HMC755LP4ETR | 制造商:Hittite Microwave Corp 功能描述:HMC755 Series 2.3 - 2.8 Ghz 1 Watt SMT Power Amplifier - 4x4 mm QFN-24 |
| HMC756 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz |
| HMC756_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz |
| HMC757 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。