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參數(shù)資料
| 型號： | HMC635 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 18000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 1.95 X 0.84 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 285K |
| 代理商： | HMC635 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC635
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
v00.1107
General Description
Features
Functional Diagram
The HMC635 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40 GHz.
The amplifier provides 19.5 dB of gain, +29 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 280 mA from a +5V
supply. Ideal as a driver amplifier for microwave radio
applications, or as an LO driver for mixers operating
between 18 and 40 GHz, the HMC635 is capable of
providing up to +24 dBm of saturated output power at
15% PAE. The amplifier’s I/Os are DC blocked and
internally matched to 50 Ohms making it ideal for
integration into Multi-Chip-Modules (MCMs). All data
is taken with die connected at input and output RF
ports via two 1 mil wedge bonds of 500μm length.
Gain: 19.5 dB
P1dB: +23 dBm
Output IP3: +29 dBm
Saturated Power: +24 dBm @ 15% PAE
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
Die Size: 1.95 x 0.84 x 0.10 mm
Electrical Specifications, T
A = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA
[1]
Typical Applications
The HMC635 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
LO Driver for Mixers
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
18 - 36
36 - 40
GHz
Gain
16
19.5
16
19
dB
Gain Variation Over Temperature
0.045
0.060
0.045
0.050
dB/ °C
Input Return Loss
15
9
dB
Output Return Loss
13
12
dB
Output Power for 1 dB Compression (P1dB)
19
23
14
19
dBm
Saturated Output Power (Psat)
24
20
dBm
Output Third Order Intercept (IP3)
24
29
21
27
dBm
Noise Figure
87
dB
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
280
mA
[1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HMC635_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz |
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