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參數(shù)資料
| 型號： | HMC636ST89E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 651K |
| 代理商： | HMC636ST89E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC636ST89 / 636ST89E
GaAs pHEMT HiGH LinEAriTy
Gain Block, 0.2 - 4.0 GHz
v02.0311
General Description
Features
Functional Diagram
The HmC636sT89(e) is a GaAs pHemT, High
linearity, low noise, wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. packaged in an industry
standard soT89, the amplifier can be used as either
a cascadable 50 ohm gain stage, a pA pre-Driver, a
low noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any pCB material or thickness.
low noise figure: 2.2 dB
High p1dB output power: +22 dBm
High output ip3: +40 dBm
Gain: 13 dB
50 ohm i/o’s - no external matching
industry standard soT89 package
Typical Applications
The HmC636sT89(e) is ideal for:
Cellular / PCS / 3G
WiMAX, WiBro, & Fixed Wireless
CATV & Cable Modem
Microwave Radio
Electrical Specifications, Vs= 5.0 V, T
A = +25° C
parameter
min
Typ.
max
min.
Typ.
max.
Units
frequency range
0.2 - 2.0
2.0 - 4.0
GHz
Gain
10
13
5
10
dB
Gain Variation over Temperature
0.01
0.02
0.01
0.02
dB/ °C
input return loss
10
dB
output return loss
13
15
dB
reverse isolation
22
20
dB
output power for 1 dB Compression (p1dB)
19
22
20
23
dBm
output Third order intercept (ip3)
36
39
36
39
dBm
noise figure
2.5
2
dB
supply Current (icq)
155
175
mA
note: Data taken with broadband bias tee on device output.
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