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參數(shù)資料
| 型號(hào)： | HMC448 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT |
| 中文描述： | 砷化鎵微波單片集成電路有源x2倍頻，19 - 25 GHz輸出 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | HMC448 |
MICROWAVE CORPORATION
4 - 33
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
F
4
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Storage:
All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached
directly to the ground plane
eutectically or with conductive
epoxy
(see
Handling, Mounting, Bonding
Note).
HMC
general
50 Ohm Microstrip transmission
lines on 0.127mm (5 mil) thick
alumina thin film substrates are
recommended for bringing RF to
and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina
thin film substrates must be
used, the die should be raised
0.150mm (6 mils) so that the
surface of the die is coplanar
with the surface of the substrate.
One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm
(6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to
minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive
epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
3 mil Ribbon Bond
3 mil Ribbon Bond
HMC448
v00.0902
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 19 - 25 GHz OUTPUT
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| HMC449LC3B | SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 31 GHz OUTPUT |
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| HMC450QS16G | GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC448_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT |
| HMC448_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT |
| HMC448LC3B | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 20 - 25 GHz OUTPUT |
| HMC448LC3B_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 20 - 25 GHz OUTPUT |
| HMC448LC3BTR | 制造商:Hittite Microwave Corp 功能描述:IC MULTIPLIER X2 BB 12SMD |
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