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參數(shù)資料
| 型號： | HMC408LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC的1瓦功率放大器，5月1日至5月9日吉赫 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 264K |
| 代理商： | HMC408LP3 |
MICROWAVE CORPORATION
8 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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HMC408LP3
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v02.0604
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power control pin. For maximum power, this pin should be
connected to 5.0V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
2, 4, 5 - 8, 12,
13, 15
N/C
No Connection
3
RF IN
This pin AC coupled and matched to 50 Ohms from
5.1 - 5.9 GHz.
9, 10, 11
RF OUT
RF output and DC bias for the output stage.
14
Vcc2
Power supply voltage for the second amplifier stage. External
bypass capacitors and pull up choke are required as shown
in the application schematic.
16
Vcc1
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
GND
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path. Vias
under the device are required.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC408LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| HMC408LP3_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| HMC408LP3E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP HBT 1W 16-QFN |
| HMC408LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC408 Series 5.1 - 5.9 GHz GaAs InGaP HBT MMIC 1 W Power Amplifier - QFN-16 |
| HMC409LP4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz |
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