參數(shù)資料
型號(hào): HMC408LP3
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
中文描述: 砷化鎵的InGaP HBT MMIC的1瓦功率放大器,5月1日至5月9日吉赫
文件頁數(shù): 4/7頁
文件大?。?/td> 264K
代理商: HMC408LP3
MICROWAVE CORPORATION
8 - 167
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
Outline Drawing
Absolute Maximum Ratings
HMC408LP3
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v02.0604
Typical Supply Current
vs. Vs= Vcc1 + Vcc2
Note: Amplifier will operate over full voltage range shown above
Vs (V)
Icq (mA)
4.75
725
5.0
750
5.25
780
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150
°
C
Continuous Pdiss (T = 85
°
C)
(derate 72.5 mW/
°
C above 85
°
C)
4.71 W
Thermal Resistance
(junction to ground paddle)
13.8
°
C/W
Storage Temperature
-65 to +150
°
C
Operating Temperature
-40 to +85
°
C
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
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