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參數(shù)資料
| 型號： | HMC404 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵微波單片集成電路二次諧波泵IRM的攪拌機，26 - 33千兆赫 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 237K |
| 代理商： | HMC404 |
MICROWAVE CORPORATION
5 - 125
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or
fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
ductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond
(RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding
with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding
force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable
wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
HMC404
GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
v02.1001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC405 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC406MS8G | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz |
| HMC407MS8G | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
| HMC408LP3 | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| HMC409LP4 | GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC404_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz |
| HMC404-SX | 功能描述:IC MIXER SUB-HARMONIC DIE 制造商:analog devices inc. 系列:- 包裝:散裝 零件狀態(tài):在售 RF 類型:通用 頻率:26GHz ~ 33GHz 混頻器數(shù):2 增益:- 噪聲系數(shù):11dB 輔助屬性:升/降頻器 電流 - 電源:28mA 電壓 - 電源:4V 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:2 |
| HMC405 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
| HMC405_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
| HMC405_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
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