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參數(shù)資料
| 型號： | HMC404 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵微波單片集成電路二次諧波泵IRM的攪拌機，26 - 33千兆赫 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 237K |
| 代理商： | HMC404 |
MICROWAVE CORPORATION
5 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical
die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
Assembly Diagrams
3 mil Ribbon Bond
3 mil Ribbon Bond
HMC404
GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
v02.1001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC405 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC406MS8G | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz |
| HMC407MS8G | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
| HMC408LP3 | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| HMC409LP4 | GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC404_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz |
| HMC404-SX | 功能描述:IC MIXER SUB-HARMONIC DIE 制造商:analog devices inc. 系列:- 包裝:散裝 零件狀態(tài):在售 RF 類型:通用 頻率:26GHz ~ 33GHz 混頻器數(shù):2 增益:- 噪聲系數(shù):11dB 輔助屬性:升/降頻器 電流 - 電源:28mA 電壓 - 電源:4V 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC405 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
| HMC405_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
| HMC405_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz |
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