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參數(shù)資料
| 型號： | HMC382LP3E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
| 中文描述： | GaAs PHEMT MMIC低噪聲放大器，一月七日至二月二日吉赫 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 298K |
| 代理商： | HMC382LP3E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc)
Idd (mA)
+4.5
67.2
+5.0
67.4
+5.5
67.6
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C)
0.451 W
Thermal Resistance
(channel to ground paddle)
144 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC382LP3
/
382LP3E
v00.1005
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA)
Rbias (Ohms)
60
27
70
16
80
13
100
8.2
120
3.9
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
12
14
16
18
20
22
24
0.2
0.4
0.6
0.8
1
1.2
1.4
60
70
80
90
100
110
120
GAIN
Noise figure
G
N
SUPPLY CURRENT (mA)
P1dB vs. Temperature @ Idd = 67 mA
Output IP3 vs. Temperature Idd = @ 67 mA
Psat vs. Temperature @ Idd = 67 mA
10
11
12
13
14
15
16
17
18
19
20
1.7
1.8
1.9
2
2.1
2.2
+25 C
P
FREQUENCY (GHz)
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
1.7
1.8
1.9
2
2.1
2.2
+25 C
O
FREQUENCY (GHz)
10
11
12
13
14
15
16
17
18
19
20
1.7
1.8
1.9
2
2.1
2.2
+25 C
P
FREQUENCY (GHz)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC382LP3ETR | 功能描述:RF Amplifier IC General Purpose 1.7GHz ~ 2.2GHz 16-QFN (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:1.7GHz ~ 2.2GHz P1dB:16dBm 增益:17dB 噪聲系數(shù):1dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:67mA 測試頻率:1.8GHz 封裝/外殼:16-VFQFN 裸露焊盤 供應(yīng)商器件封裝:16-QFN（3x3） 標(biāo)準(zhǔn)包裝:1 |
| HMC383 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383LC4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383LC4_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
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