參數(shù)資料
型號(hào): HMC337
廠商: 美國(guó)訊泰微波有限公司上海代表處
元件分類(lèi): FPGA
英文描述: 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
中文描述: 砷化鎵微波單片集成電路二次諧波泵混合器,17 - 25千兆赫
文件頁(yè)數(shù): 8/8頁(yè)
文件大小: 286K
代理商: HMC337
MICROWAVE CORPORATION
5 - 101
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or
fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
ductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically
bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are
recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams.
All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic
energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12
mils (0.31 mm).
HMC337
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 17 - 25 GHz
v01.0803
相關(guān)PDF資料
PDF描述
HMC338LC3B GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz
HMC338 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC337_07 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 17 - 25 GHz
HMC337_09 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 17 - 25 GHz
HMC337-SX 功能描述:IC MIXER SUB-HARMONIC DIE 制造商:analog devices inc. 系列:- 包裝:散裝 零件狀態(tài):在售 RF 類(lèi)型:通用 頻率:17GHz ~ 25GHz 混頻器數(shù):1 增益:- 噪聲系數(shù):9dB 輔助屬性:升/降頻器 電流 - 電源:28mA 電壓 - 電源:3 V ~ 4 V 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2
HMC338 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz
HMC338_09 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz