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參數(shù)資料
| 型號(hào)： | HMC330 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 元件分類(lèi)： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵微波單片集成電路二次諧波泵混合器，25 - 40千兆赫 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | HMC330 |
MICROWAVE CORPORATION
5 - 93
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
Handling Precautions
Follow these precautions to avoid permanent damage.
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-
60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with
a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A
minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than
12 mils (0.31 mm).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC331 | GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| HMC332 | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC333 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC334LP4 | SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz |
| HMC334LP4E | SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC330_01 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz |
| HMC330_10 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz |
| HMC331 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| HMC331_08 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| HMC331_09 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
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