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參數(shù)資料
| 型號(hào)： | HMC322LP4 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz |
| 中文描述： | 砷化鎵微波單片集成電路SP8T非反射開(kāi)關(guān)，直流- 8.0吉赫 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大小： | 177K |
| 代理商： | HMC322LP4 |
MICROWAVE CORPORATION
7 - 19
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
S
HMC322
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
v00.0303
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC322LP4_06 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz |
| HMC322LP4_08 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8 GHz |
| HMC322LP4E | 制造商:Hittite Microwave Corp 功能描述:IC SWITCH SP8T 8GHZ NEG 24-QFN |
| HMC322-SX | 功能描述:RF Switch IC VSAT SP8T 10GHz 50 Ohm Die 制造商:analog devices inc. 系列:- 包裝:托盤(pán) 零件狀態(tài):生命周期結(jié)束 頻率?- 下:0Hz 頻率?- 上:10GHz 隔離 @ 頻率:32dB @ 6GHz（標(biāo)準(zhǔn)） 插損 @ 頻率:2.1dB @ 6GHz IIP3:38dBm（標(biāo)準(zhǔn)） 拓?fù)?吸收性 電路:SP8T P1dB:23dBm（標(biāo)準(zhǔn)） IP1dB 特性:- 阻抗:50 歐姆 工作溫度:-40°C ~ 85°C 電壓 - 電源:- RF 類(lèi)型:VSAT 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC323 | 制造商:Hittite Microwave Corp 功能描述:0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
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