參數(shù)資料
型號: HMC311LP3
廠商: 美國訊泰微波有限公司上海代表處
英文描述: InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
中文描述: InGaP HBT增益模塊MMIC放大器,直流- 6.0吉赫
文件頁數(shù): 4/6頁
文件大?。?/td> 264K
代理商: HMC311LP3
MICROWAVE CORPORATION
8 - 65
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+7.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
0.339 W
Thermal Resistance
(junction to ground paddle)
192 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
HMC311LP3
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
v01.0604
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
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