參數(shù)資料
型號(hào): HMC292
廠商: 美國(guó)訊泰微波有限公司上海代表處
元件分類: FPGA
英文描述: 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
中文描述: GaAs MMIC雙平衡混頻器,18 - 32千兆赫
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 167K
代理商: HMC292
MICROWAVE CORPORATION
5 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
HMC292
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
v02.1202
MMIC Assembly Techniques
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recom-
mended to minimize inductance on the RF ports.
Ribbon Bond
Ribbon Bond
相關(guān)PDF資料
PDF描述
HMC294 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
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HMC300LM1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz
HMC304MS8 GaAs MMIC HIGH IP3 SINGLEBALANCED SMT MIXER, 1.7 - 3 GHz
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