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參數(shù)資料
| 型號： | HMC283LM1 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| 中文描述： | 貼片中功率砷化鎵MMIC放大器，17 - 40千兆赫 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 284K |
| 代理商： | HMC283LM1 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
HMC283
v02.0500
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane
eutectically or with conductive epoxy (see HMC gen-
eral Handling, Mounting, Bonding Note.)
50 Ohm Microstrip transmission lines on 0.127 mm (5
mil) thick alumina thin film substrates are recom-
mended for bringing RF to and from the chip (Figure 1).
If 0.254 mm (10 mil) thick alumina thin film substrates
must be used, the die should be raised 0.150 mm (6
mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is
to attach the 0.102 mm (4 mil) thick die to a 0.150 mm
(6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the
die as possible in order to minimize bond wire length.
Typical die-to-substrate spacing is 0.076 mm (3 mils).
Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) is recommended to minimize inductance on the RF ports.
0.025 mm (1 mil) diameter ball or wedge bonds are acceptable for DC bias connections.
RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutecti-
cally or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The
photo in figure 3 shows a typical assembly for the HMC283 MMIC chip.
Figure 3:
Typical HMC283 Assembly
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PDF描述 |
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| HMC284MS8G | SPDT NON-REFLECTIVE SWITCH, DC - 3.5 GHz |
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| HMC286 | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC287MS8 | GaAs MMIC LOW NOISE AMPLIFIER with AGC, 2.3 - 2.5 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC283LM1_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC283LM1_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC283LM1_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC284AMS8G | 功能描述:IC SWITCH SPDT DC-3.5GHZ 8-MSOP 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態(tài):最後搶購 頻率?- 下:DC 頻率?- 上:3.5GHz 隔離 @ 頻率:40dB @ 3.5GHz（標(biāo)準(zhǔn)） 插損 @ 頻率:0.7dB @ 3.5GHz IIP3:50dBm（最?。?拓?fù)?吸收 電路:SPDT P1dB:29dBm（標(biāo)準(zhǔn)） IP1dB 特性:- 阻抗:50 歐姆 工作溫度:-40°C ~ 85°C 電壓 - 電源:- RF 類型:手機(jī)，ISM，PCS 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬）裸露焊盤 供應(yīng)商器件封裝:8-MSOPG 標(biāo)準(zhǔn)包裝:1 |
| HMC284AMS8GE | 制造商:Hittite Microwave Corp 功能描述:IC SWITCH SPDT DC-3.5GHZ 8-MSOP |
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