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參數(shù)資料
| 型號(hào)： | HMC263 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
| 中文描述： | 砷化鎵MMIC低噪聲放大器，24 - 36千兆赫 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 212K |
| 代理商： | HMC263 |
MICROWAVE CORPORATION
1 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
1
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
HMC263
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
v02.0701
Drain Bias Voltage (Vdd1, Vdd2)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
-5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 7.69 mW/°C above 85 °C)
0.692 W
Thermal Resistance
(channel to die bottom)
130 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
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| HMC263_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
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