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參數(shù)資料
| 型號(hào)： | HMC258LM3 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵微波單片集成電路次諧波貼片混頻器，14 - 20千兆赫 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 203K |
| 代理商： | HMC258LM3 |
MICROWAVE CORPORATION
5 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
MIC Assembly Techniques
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates
are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick
alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that
the surface of the die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat
spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize
bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor
(mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 Mils)
from the chip is recommended. The photo in figure 3 shows a typical assembly for the
HMC258 MMIC chip.
v01.0801
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Figure 3:
Typical HMC258 Assembly
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC259 | GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz |
| HMC260 | XCV600-4BGG432C - NOT RECOMMENDED for NEW DESIGN |
| HMC261LM1 | SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz |
| HMC262 | GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz |
| HMC263 | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC258LM3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz |
| HMC258LM3_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz |
| HMC259 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz |
| HMC259_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz |
| HMC25DRAH | 功能描述:CONN EDGECARD 50POS R/A .100 SLD RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:28 位置數(shù):56 卡厚度:0.062"（1.57mm） 行數(shù):2 間距:0.156"（3.96mm） 特點(diǎn):- 安裝類型:通孔，直角 端子:焊接 觸點(diǎn)材料:磷青銅 觸點(diǎn)表面涂層:金 觸點(diǎn)涂層厚度:30µin（0.76µm） 觸點(diǎn)類型：:全波紋管 顏色:綠 包裝:托盤 法蘭特點(diǎn):側(cè)面安裝開口，無螺紋，0.125"（3.18mm）直徑 材料 - 絕緣體:聚苯硫醚（PPS） 工作溫度:-65°C ~ 125°C 讀數(shù):雙 |
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