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參數(shù)資料
| 型號： | HMBT5401 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HMBT5401 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5401
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6819
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5401
HSMC Product Specification
Description
The HMBT5401 is designed for general purpose applications
requiring high breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage (BVCEO=150V@ IC=1mA)
Complements to NPN Type HMBT5551
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
50
60
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-200
-500
-1
-1
-
240
-
300
6
Unit
V
V
V
nA
mV
mV
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-120V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHZ
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMBT5551 | NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) |
| HMBT6427 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT6429 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT6517 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT6520 | PNP EPITAXIAL PLANAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMBT5551 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) |
| HMBT6427 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT6429 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT6517 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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