參數(shù)資料
型號(hào)： HMBT5087
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 28K
代理商： HMBT5087
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5087
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6850
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5087
HSMC Product Specification
Description
The HMBT5087 is designed for low noise, high gain, general purpose
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage.............................................................................................. -3V
IC Collector Current ........................................................................................................ -50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO1
ICBO2
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-50
-50
-3
-
-
-
-
250
250
250
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-300
-850
800
-
-
-
4.0
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-10V
VCB=-35V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-0.5mA, f=100MHz
VCB=-5V, f=100KHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
相關(guān)PDF資料
PDF描述
HMBT5088 Carbon Composition Resistor; Series:OA; Resistance:39ohm; Resistance Tolerance: 10%; Power Rating:1W; Resistor Element Material:Carbon Compound; Voltage Rating:1000VDC; Leaded Process Compatible:Yes RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMBT5088 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HMBT5089 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HMBT5401 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HMBT5551 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages )
HMBT6427 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
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