參數(shù)資料
型號(hào)： HMBT4125
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁數(shù)： 1/2頁
文件大?。?/td> 18K
代理商： HMBT4125
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT4125
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/2
HMBT4125
HSMC Product Specification
Description
The HMBT4125 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -65 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -30 V
VCEO Collector to Emitter Voltage..................................................................................... -30 V
VEBO Emitter to Base Voltage.......................................................................................... -4.0 V
IC Collector Current....................................................................................................... -200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-30
-30
-4
-
-
-
-
50
25
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.4
-950
150
-
-
4.5
Unit
V
V
V
nA
nA
V
mV
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VBE=-3V
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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